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| PD - 95218 IRF7507PBF HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 D1 D1 D2 D2 N-Ch P-Ch VDSS 20V -20V P-CHANNEL MOSFET Top View RDS(on) 0.135 0.27 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 20 2.4 1.9 19 1.25 0.8 10 12 16 5.0 -5.0 -55 to + 150 240 (1.6mm from case) Max. P-Channel -20 -1.7 -1.4 -14 Units V A W W mW/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W www.irf.com 1 5/11/04 IRF7507PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 -- -- -- -- -- -- 0.7 -0.7 2.6 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions -- -- VGS = 0V, ID = 250A V -- -- VGS = 0V, ID = -250A 0.041 -- Reference to 25C, ID = 1mA V/C -0.012 -- Reference to 25C, ID = -1mA 0.085 0.14 VGS = 4.5V, ID = 1.7A 0.120 0.20 VGS = 2.7V, I D = 0.85A 0.17 0.27 VGS = -4.5V, ID =-1.2A 0.28 0.40 VGS = -2.7V, ID =-0.6A -- -- VDS = VGS, ID = 250A V -- -- VDS = VGS, ID = -250A -- -- VDS = 10V, ID = 0.85A S -- -- VDS = -10V, ID = -0.6A -- 1.0 VDS = 16 V, VGS = 0V -- -1.0 VDS = -16V, VGS = 0V A -- 25 VDS = 16 V, VGS = 0V, TJ = 125C -- -25 VDS = -16V, VGS = 0V, TJ = 125C -- 100 VGS = 12V 5.3 8.0 N-Channel 5.4 8.2 ID = 1.7A, VDS = 16V, VGS = 4.5V 0.84 1.3 nC 0.96 1.4 P-Channel 2.2 3.3 ID = -1.2A, V DS = -16V, V GS = -4.5V 2.4 3.6 5.7 -- N-Channel 9.1 -- VDD = 10V, ID = 1.7A, R G = 6.0, 24 -- RD = 5.7 35 -- ns 15 -- P-Channel 38 -- VDD = -10V, ID = -1.2A, RG = 6.0, 16 -- RD = 8.3 43 -- 260 -- N-Channel 240 -- VGS = 0V, VDS = 15V, = 1.0MHz 130 -- pF 130 -- P-Channel 61 -- VGS = 0V, VDS = -15V, = 1.0MHz 64 -- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) gfs I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Source-Drain Ratings and Characteristics Parameter IS I SM V SD t rr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 1.25 -- -- -1.25 A -- -- 19 -- -- -14 -- -- 1.2 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.2A, V GS = 0V -- 39 59 N-Channel ns -- 52 78 TJ = 25C, I F = 1.7A, di/dt = 100A/s -- 37 56 P-Channel nC TJ = 25C, IF = -1.2A, di/dt = -100A/s -- 63 95 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 21 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N - Channel 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP IRF7507PBF 100 I , Drain-to-Source Current (A) D 10 I , Drain-to-Source Current (A) D 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 1 1 1.5V 0.1 0.1 0.01 0.1 1.5V 20s PULSE WIDTH TJ = 25C A 1 10 0.01 0.1 20s PULSE WIDTH TJ = 150C A 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 100 I D , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 10 TJ = 150C TJ = 25C TJ = 150C TJ = 25C 1 1 0.1 1.5 2.0 2.5 V DS = 10V 20s PULSE WIDTH 3.0 3.5 4.0 A 0.1 0.4 VGS = 0V 0.6 0.8 1.0 1.2 1.4 1.6 A 1.8 VGS , Gate-to-Source Voltage (V) V SD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage 0.8 2.0 R DS(on) , Drain-to-Source On Resistance RDS(on) , Drain-to-Source On Resistance ID = 1.7A 1.5 0.6 (Normalized) 1.0 0.4 V 0.2 0.5 GS = 2.5V 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 A 0.0 0 VGS = 5.0V 2 4 6 A TJ , Junction Temperature (C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com Fig 6. Typical On-Resistance Vs. Drain Current 3 IRF7507PBF ( N - Channel 0.13 100 R DS(on) , Drain-to-Source On Resistance OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 0.11 10us 10 100us 0.09 I D = 2.4A 1ms 1 10ms 0.07 0.05 2 3 4 5 6 7 8 A 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 V GS , Gate-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 500 Fig 8. Maximum Safe Operating Area 400 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + Cgd , Cds SHORTED C rss = C gd C oss = Cds + C gd 10 I D = 1.7A VDS = 16V 8 C, Capacitance (pF) Ciss 300 Coss 6 200 4 Crss 100 2 0 1 10 100 A 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 9 6 8 10 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com P - Channel 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP IRF7507PBF 100 TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 10 10 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V 1 1 0.1 0.1 -1.5V -1.5V 0.01 0.1 1 20s PULSE WIDTH TJ = 25C A 10 0.01 0.1 1 20s PULSE WIDTH TJ = 150C 10 A -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 11. Typical Output Characteristics 10 Fig 12. Typical Output Characteristics 10 -ID , Drain-to-Source Current (A) TJ = 150C 1 -ISD , Reverse Drain Current (A) TJ = 25C TJ = 150C 1 TJ = 25C 0.1 0.1 0.01 1.5 2.0 2.5 3.0 VDS = -10V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 A 0.01 0.4 0.6 0.8 1.0 VGS = 0V A 1.2 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 13. Typical Transfer Characteristics 2.0 Fig 14. Typical Source-Drain Diode Forward Voltage 1.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -1.2A R DS (on) Drain-to-Source On Resistance , 0.8 1.5 0.6 1.0 VGS = -2.5V 0.4 0.5 VGS = -5.0V 0.2 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A 0.0 0.0 0.5 1.0 1.5 2.0 TJ , Junction Temperature (C) -I D , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com Fig 16. Typical On-Resistance Vs. Drain Current 5 IRF7507PBF P - Channel 0.300 100 R DS (on), Drain-to-Source On Resistance OPERATION IN THIS AREA LIMITED BY RDS(on) -ID , Drain Current (A) I 0.250 10 100us ID = -1.7A 0.200 1ms 1 10ms 0.150 0.100 2 3 4 5 6 7 8 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VGS , Gate-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 500 Fig 18. Maximum Safe Operating Area 10 400 -V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = -1.2A VDS = -16V 8 C, Capacitance (pF) Ciss 300 Coss 6 200 4 Crss 100 2 0 1 10 100 A 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 19 6 8 10 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7507PBF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D - B3 DDDD 8765 H 0.25 (.010) 1234 SSSG e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) S1 G1 S2 G2 M A M SINGLE 1234 D1 D1 D2 D2 8765 DUAL 1234 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 3 8765 E - A- .0256 BASIC .0128 BASIC .116 .188 .016 0 .120 .198 .026 6 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0 3.05 5.03 0.66 6 NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF 7501 LOT CODE (XX) DATE CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z www.irf.com 7 IRF7507PBF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 8 www.irf.com |
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